ESD5321N 1 - line, uni - directional, ultra - low capacitance transient voltage suppressors descriptions the ESD5321N is a n ultra - low capacitance tvs (transient voltage suppressor) designed to protect high speed data interfaces. it has been specifically desig ned to protect sensitive electronic components which are connected to data and transmission lines from over - stress caused by esd (e lectro s tatic d ischarge ). the ESD5321N incorporates one pair of ultra - low capacitance steering diodes plus a tvs diode. the ESD5321N may be used to provide esd protection up to 30k v (contact discharge ) according to iec61000 - 4 - 2 , and withstand peak pulse current up to 10 a ( 8/20 s ) according to iec61000 - 4 - 5. the ESD5321N is available in dfn1006 - 2l package. standard products ar e pb - free and halogen - free. features ? stand - off voltage: 5v max ? transient protection for each line according to iec61000 - 4 - 2 (esd): 30 kv ( contact discharge) iec61000 - 4 - 5 (surge): 10a (8/20 s) ? ultra - low capacitance: c j = 0.8 pf typ. ? ultra - low leakage curre nt: i r = 0.1na typ. ? low clamping voltage: v cl = 1 5 v typ. @ i pp = 16a (tlp) ? solid - state silico n technology applications ? usb interface ? hdmi interface ? dvi interface ? portable electronics ? notebooks dfn1006 - 2l (bottom vi ew) pin configuration 5 = device code * = month code ( a~z) marking (top view) order i nformation device package shipping ESD5321N - 2/tr dfn1006 - 2l 10 000/tape&reel p i n 1 p i n 2 p i n 1 p i n 2 5 * 1 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification p i n 1 p i n 2 p i n 1 p i n 2 5 *
absolute maximum ratings electrical characteristics (t a =25 o c, unless otherwise noted) 1) tlp parameter: z 0 = 50 , t p = 100ns, t r = 2n s, averaging window from 60ns to 80ns. r dyn i s calculated from 4a to 16a. 2) according to iec61000 - 4 - 5. parameter symbol rating unit peak pulse power (t p = 8/20s) p pk 16 0 w peak pulse current (t p = 8/20s) i pp 10 a esd according to iec61000 - 4 - 2 air discharge v esd 30 kv esd according to iec61000 - 4 - 2 contact discharge 30 operation junction temperature t j 125 o c lead temperature t l 26 0 o c storage temperature t stg - 55~150 o c parameter symbol condition min. typ. max. unit rever se maximum working voltage v rwm 5.0 v reverse leakage current i r v rwm = 5v 0.1 100 na re verse breakdown voltage v br i t = 1ma 7.0 8.0 9.0 v forward voltage v f i t = 10ma 0.6 0.9 1.2 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 1 5 v dynamic resistance 1) r dyn 0.25 clamping voltage 2 ) v cl i pp = 1a, t p = 8/20s 10 v i pp = 10 a, t p = 8/20s 16 v junction capacitance c j v r = 0v, f = 1mhz any i/o pin to gnd 0.8 1.0 pf ESD5321N 2 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t a =25 o c, unless otherwise noted) 8/20 s waveform per iec61000 - 4 - 5 clamping voltage vs. peak pulse current non - repetitive peak pulse power vs. pulse time contact discharge current waveform per iec61000 - 4 - 2 capacitance vs. reveres voltage power derating vs. ambient temperature 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 0 1 2 3 4 5 6 7 8 9 10 11 10 12 14 16 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 t 2 t 1 front time: t 1 = 1.25 ? ? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t ESD5321N 3 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( p s) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 0 1 2 3 4 5 6 7 8 9 10 11 10 12 14 16 pulse waveform: t p = 8/20 p s v c - clamping voltage (v) i pp - peak pulse current (a) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 t 2 t 1 front time: t 1 = 1.25 u t = 8 p s time to half-value: t 2 = 20 p s peak pulse current (%) time ( p s) t
esd clamping (+8kv contact discharge per iec61000 - 4 - 2) tlp measurement esd clamping ( - 8kv contact discharge per iec61000 - 4 - 2) 0 2 4 6 8 10 12 14 16 0 4 8 12 16 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v) ESD5321N 4 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 0 2 4 6 8 10 12 14 16 0 4 8 12 16 20 z 0 = 50 : t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
package outline dimensions dfn1006 - 2l top view bottom view side view side view symbol dimensions in millimeter min. typ. max. a 0.40 - 0.50 a1 0.00 - 0.05 a3 0.125 ref. d 0.95 1.00 1.05 e 0.55 0.60 0.65 b 0.20 0.25 0.30 l 0.45 0.50 0.55 e 0.65 typ. recommend land pattern (unit: mm) notes : this land pattern is for your reference only. 0 . 3 0 0 . 8 5 1 . 4 0 0 . 5 5 0 . 6 0 ESD5321N 5 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 0 . 3 0 0 . 8 5 1 . 4 0 0 . 5 5 0 . 6 0
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